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Part Number IXTT52N30P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTT52N30P DatasheetIXTT52N30P Datasheet (PDF)

  IXTT52N30P   IXTT52N30P
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P Maximum Ratings 300 V 300 V  20 V  30 V 52 A 150 A 52 A 1 J 10 V/ns 400 W -55 ... +150 150 -55 ... +150 300 260  C  C  C °C °C 1.13 / 10 4.0 5.5 Nm/lb.in g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 300 V 2.5 5.0 V           100 nA .



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