IXFV18N60PS

www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on) trr = = ≤ ≤ 600 V 18 A 400 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 18 45 18 30 1.0 10 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 AD (IXFH) D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV...S) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247) 300 260 1.13/10 Nm/lb.in. 6 4 g g G = Gate S = Source G S D (TAB) TO-247 PLUS220 & PLUS220SMD D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 2.5 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 ±100 25 250 400 V V Features l l l nA μA μA mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Space savings Hi...