PolarHT HiPerFET Power MOSFET
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PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated
Pre...
Description
www.DataSheet4U.com
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated
Preliminary Data Sheet
IXFH 74N20P IXFV 74N20P IXFV 74N20PS
VDSS ID25 trr
RDS(on)
= = = ≤
200 74 34 200
V A mΩ ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns
TO-247 (IXFH)
G D S
D (TAB)
PLUS220 (IXFV)
G W °C °C °C °C °C
D
S
D (TAB)
PLUS220SMD (IXFV-PS)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting Force Mounting torque TO-247 PLUS220 (PLUS220) (TO-247)
300 250
1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 6.0 4.0 g g
G S G = Gate S = Source D = Drain TAB = Drain D (TAB)
Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ Advantages
z z z z z z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs...
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