Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
5.0±0.2
4.0...
Transistors
2SC0829 (2SC829)
Silicon
NPN epitaxial planar type
For high-frequency amplification
Unit: mm
5.0±0.2
4.0±0.2
5.1±0.2
■ Features Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
0.7±0.2 12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
30
V
0.45+–00..115
0.45+–00..115
e Collector-emitter voltage (Base open) VCEO
20
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
30
mA
2.3±0.2
le sta ntinu Collector power dissipation
PC
400
mW
a e cyc isco Junction temperature
Tj
150
°C
life d, d Storage temperature
Tstg −55 to +150 °C
2.5+–00..26
2.5+–00..26
1 23
1: Emitter 2: Collector 3: Base TO-92-B1 Package
intenntinues follopwlianngefdoudrisPcroondtiuncuted type ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
e/D e, m Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
250
D anc typ Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230
MHz
inten nce Reverse transfer capacitance Ma tena (Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.3 ...
