HEXFET Power MOSFET
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PD - 95943A
AUTOMOTIVE MOSFET
IRFR2905ZPbF IRFU2905ZPbF
HEXFET® Power MOSFET
D
Features
l l l l ...
Description
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PD - 95943A
AUTOMOTIVE MOSFET
IRFR2905ZPbF IRFU2905ZPbF
HEXFET® Power MOSFET
D
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V
G S
RDS(on) = 14.5mΩ ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D-Pak IRFR2905Z
Max.
59 42 42 240 110
I-Pak IRFU2905Z
Units
A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM
PD @TC = 25°C Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
W W/°C V mJ A mJ
d
0.72 ± 20
Single Pulse Avalanche Energy Tested Value
Ã
h
55 82 See Fig.12a, 12b, 15, 16 -55 to + 175
Repetitive Avalanche Energy Operating Junction and Storage ...
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