SKD75GAL123D

Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Tcase = 80 °C Tcase = 80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values 1200 1200 75 / 45 140 / 90 ± 20 350 / 125 / 125 – 40 . . .+150 (125) 2 500 Class F 55/150/56 D1-6 9) 600 1800 D7 15 30 200 200 D8 30 60 350 600 V V A A V W °C V SEMITRANS® M IGBT Modules Units www.DataSheet4U.com SKD 75 GAL 123 D Input bridge B6U with brake chopper Preliminary Data A A A A2s 7D-Pack = 7 Diodes Pack Characteristics Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres td(on) tr td(off) tf Eon Eoff Conditions 1) VGE = 0, IC = 1 mA VGE = VCE, IC = 2 mA  Tj = 25 °C VGE = 0  VCE = VCES  Tj = 125 °C VGE = 20 V, VCE = 0  IC = 50 A  VGE = 15 V;   IC = 75 A  Tj = 25 (125) °C VCE = 20 V, IC = 25 A per IGBT min. typ. max. – 6,5 1 – 200 3(3,7) – – 350 4300 650 300 100 100 500 100 – – 2,5 – 1,2 70 – – 2,5 – 1,2 44 – – Units V V mA mA nA V V S pF pF pF pF ns ns ns ns mWs mWs V V V mΩ A µC V V V mΩ A µC °C/W °C/W °C/W ≥ VCES – 4,5 5,5 – 0,8 – 3,5 – – – 2,5(3,1) – 3(3,8) 40 – – – – – – – – – – – – – – – – – – – – – – – – – – 3300 500 220 44 56 380 70 8 5 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,0 (1,8) 2,3 (2,1) – 25 19(25) 1,5(4,5) – – – SKD 75 GAL Features Round main terminals (2 mm∅...