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OD-24F2

OptoDiode

HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 www.DataSheet4U.com OD-24F2 FEATURES ANODE (CASE) .209 .220 ...


OptoDiode

OD-24F2

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 www.DataSheet4U.com OD-24F2 FEATURES ANODE (CASE) .209 .220 High current capability 880nm peak emission for optimum matching with ODD-45W photodiode Hermetically sealed TO-46 package Narrow angle of emission .041 .183 .186 .152 .154 .017 .100 .030 .040 .197 .205 CATHODE .036 45° All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C Total Power Output, Po PARAMETERS TEST CONDITIONS IF = 200mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 20 TYP 220 880 80 8 25 MAX UNITS mW/sr nm nm mW Radiant Intensity, Ie Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.5 30 60 1.8 Volts Volts Msec Msec pF Deg 0.7 0.7 ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 360mW 200mA 5V 7A Peak Forward Current (10Ms, 230Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C TO 100°C 350°C/W Typical 115°C/W Typical 100°C 1Heat transfer minimized by measuring in still air with minimu...




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