D1275A

Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB0949 and 2SB0949A High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 0.7±0.1 www.DataSheet4U.com Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Features φ 3.1±0.1 4.2±0.2 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.0 150 −55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1275 2SD1275A 2SD1275 2SD1275A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SD1275 2SD1275A VBE ICBO VCE = 4 V, IC = 2 A VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, I...