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CQD-4M

Central Semiconductor

4.0 AMP TRIAC 600 THRU 800 VOLTS

CQD-4M CQD-4N 4.0 AMP TRIAC 600 THRU 800 VOLTS Central TM www.DataSheet4U.com Semiconductor Corp. DESCRIPTION: The ...


Central Semiconductor

CQD-4M

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Description
CQD-4M CQD-4N 4.0 AMP TRIAC 600 THRU 800 VOLTS Central TM www.DataSheet4U.com Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Storage Temperature Junction Temperature VDRM IT(RMS) ITSM I 2t PGM PG (AV) IGM Tstg TJ CQD -4M 600 4.0 40 2.4 3.0 0.2 1.2 -40 to +150 -40 to +125 CQD -4N 800 UNITS V A A A2s W W A °C °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III, IV ITM=6.0A, tp=380µs VD=2 /3 VDRM, TC=125°C 11 TYP MAX 10 200 UNITS µA µA mA mA mA V V V/µs 2.5 5.4 1.6 0.95 1.25 5.0 9.0 5.0 1.75 1.75 R0 (20-May 2004) Central TM Semiconductor Corp. CQD-4M CQD-4N www.DataSheet4U.com 4.0 AMP TRIAC 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MI...




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