CQDD-12M

CQDD-12M CQDD-12N 12 AMP TRIAC 600 THRU 800 VOLTS Central TM www.DataSheet4U.com Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance di/dt Tstg TJ ΘJA ΘJC 10 -40 to +150 -40 to +125 60 2.7 A/µs °C °C °C/W °C/W VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM CQDD -12M 600 12 80 27 40 1.0 4.0 16 CQDD -12N 800 UNITS V A A A2s W W A V ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=100mA VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV ITM=17A, tp=380µs VD=2 /3 VDRM, RGK=∞, TC=125°C 10 TYP MAX 10 500 UNITS µA µA mA mA mA V V V V/µs 9.9 24.3 14.1 1.10 2.10 1.33 20 50 25 1.50 2.50 1.50 R1 (24-September 2004) Central TM Semiconductor Corp. CQDD-12M CQDD-12N www.DataShe...