CQDD-16M

CQDD-16M CQDD-16N SURFACE MOUNT 16 AMP SILICON TRIACS 600 THRU 800 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-16M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge, t=8.3ms I2t Value for Fusing, t=8.3ms SYMBOL VDRM IT(RMS) ITSM I2t Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Repetitive, f=60Hz PGM PG(AV) IGM VGM di/dt Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance TJ Tstg ΘJA ΘJC ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM Rated VDRM IDRM Rated VDRM, TC=125°C IGT VD=12V, RL=10Ω, QUAD I, II, III IGT VD=12V, RL=10Ω, QUAD IV IH IT=100mA VGT VD=12V, RL=10Ω, QUAD I, II, III VGT VD=12V, RL=10Ω, QUAD IV VTM ITM=22.5A, tp=380μs dv/dt VD=2/3 VDRM, RGK=∞, TC=125°C 10 CQDD-16M 600 CQDD-16N 800 16 110 50 40 1.0 6.0 16 10 -40 to +125 -40 to +150 60 2.3 UNITS V A A A2s W W A V A/μs °C °C °C/W °C/W TYP MAX UNITS 10 μA 2.0 mA 10.9 25 mA 55.2 75 mA 9.8 25 mA 0.97 1.50 V 1.51 2.50 V 1.35 1.60 V V/μs R3 (11-January 2018) C...