CQDD-25N

CQDD-25M CQDD-25N 25 AMP TRIAC 600 THRU 800 VOLTS Central TM www.DataSheet4U.com Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance di/dt Tstg TJ ΘJA ΘJC 10 -40 to +150 -40 to +125 60 1.7 A/µs °C °C °C/W °C/W VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM CQDD -25M 600 25 150 94 40 1.0 10 16 CQDD -25N 800 UNITS V A A A2s W W A V ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=100mA VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV ITM=35A, tp=380µs VD=2 /3 VDRM, RGK=∞, TC=125°C 6.0 TYP MAX 10 2.0 UNITS µA mA mA mA mA V V V V/µs 11.1 28.2 18.4 1.03 1.74 30 60 50 1.50 2.50 1.80 R1 (24-September 2004) Central TM Semiconductor Corp. CQDD-25M CQDD-25N www.DataSheet4...