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APTGT75DH60T1G Dataheets PDF



Part Number APTGT75DH60T1G
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description Power-Module IGBT
Datasheet APTGT75DH60T1G DatasheetAPTGT75DH60T1G Datasheet (PDF)

www.DataSheet4U.com APTGT75DH60T1G Asymmetrical - Bridge Trench + Field Stop IGBT Power Module VCES = 600V IC = 75A* @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical .

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www.DataSheet4U.com APTGT75DH60T1G Asymmetrical - Bridge Trench + Field Stop IGBT Power Module VCES = 600V IC = 75A* @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 100* 75* 140 ±20 250 150A @ 550V Unit V A V W April, 2009 1–6 APTGT75DH60T1G – Rev 0 * Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com www.DataSheet4U.com APTGT75DH60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 75A Tj = 25°C RG = 4.7Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Test Conditions Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C 75 1.6 1.5 100 150 3.6 7.6 0.85 1.8 Min 600 VR=600V 250 500 2 ns µC mJ April, 2009 2–6 APTGT75DH60T1G – Rev 0 Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Max Unit µA V V nA Unit pF µC 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Min Typ 4620 300 140 0.8 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6 380 ns ns mJ mJ A Diode ratings and characteristics (CR2 & CR3) Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Typ Max Unit V µA A V Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 75A VGE = 0V di/dt =2000A/µs IF = 75A VR = 300V CR1 & CR4 are IGBT protection diodes only www.microsemi.com www.DataSheet4U.com APTGT75DH60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.60 0.98 175 125 100 4.7 80 Unit °C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V °C N.m g To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜ ⎜T − T ⎟ ⎟⎥ ⎝ 25 ⎠⎦ ⎣ T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit kΩ % K % SP1 Package outline (dimensions in mm) www.microsemi.com 3–6 APTGT75DH60T1G – Rev 0 April, 2009 www.DataSheet4U.com APTGT75DH60T1G See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 4–6 APTGT75DH60T1G – Rev 0 April, 2009 www.DataSheet4U.com APTGT75DH60T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 TJ = 150°C VGE=19V 150 TJ=25°C 125 TJ=125°C 125 TJ=150°C IC (A) 100 75 50 25 0 0 0.5 1 TJ=25°C 100 IC (A) 75 50 VGE=13V VGE=15V VGE=9V 25 0 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 150 12.


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