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APTGT75DH60TG

Microsemi Corporation

Power-Module IGBT

APTGT75DH60TG Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.co...


Microsemi Corporation

APTGT75DH60TG

File Download Download APTGT75DH60TG Datasheet


Description
APTGT75DH60TG Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC = 75A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Max ratings 600 100 75 140 ±20 250 150A @ 550V Unit V A V W E1 OUT1 O UT2 Q4 G4 CR2 E4 0/VBUS SENSE NTC1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.micr...




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