Power-Module IGBT
APTGT75TDU120P
Triple Dual Common Source Trench IGBT® Power Module
C1 C3 C5
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VCES = 1200V IC = 75A ...
Description
APTGT75TDU120P
Triple Dual Common Source Trench IGBT® Power Module
C1 C3 C5
www.DataSheet4U.com
VCES = 1200V IC = 75A @ Tc = 80°C
Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies
G1
G3
G5
E1 E1/E2
E3 E3/E4
E5 E5/E6
E2
E4
E6
G2 C2
G4 C4
G6 C6
Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Very low (12mm) profile Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 1200 100 75 175 ±20 350 150A@1150V Unit V A V W
September, 2004 1-5 APTGT75TDU120P – Rev 0
C1
C3
C5
G1 E1/E2 E1 E2 G2 E3/E4
G3 E3 E4 G4 E5/E6
G5 E5 E6 G6
C2
C4
C6
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C T...
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