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APTGT50A120TG Dataheets PDF



Part Number APTGT50A120TG
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description Power-Module IGBT
Datasheet APTGT50A120TG DatasheetAPTGT50A120TG Datasheet (PDF)

APTGT50A120TG Phase leg Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NTC2 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • K.

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APTGT50A120TG Phase leg Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NTC2 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Max ratings 1200 75 50 100 ±20 277 100A @ 1150V Unit V July, 2006 1-5 APTGT50A120TG – Rev 1 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 E2 OUT VBUS 0/VBUS OUT E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT50A120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit µA V V nA www.DataSheet4U.com 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A R G = 18 Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A R G = 18 Ω VGE = 15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C R G = 18 Ω Min Typ 3600 190 160 90 30 420 70 90 50 520 90 5 Max Unit pF ns ns mJ 5.5 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1200 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 50A 50 1.4 1.3 150 250 4.5 9 2.1 4.2 1.9 V ns July, 2006 2-5 APTGT50A120TG – Rev 1 IF = 50A VR = 600V di/dt =2000A/µs µC mJ www.microsemi.com APTGT50A120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K www.DataSheet4U.com RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85   T − T    25  T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.45 0.58 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50A120TG – Rev 1 July, 2006 APTGT50A120TG Typical Performance Curve 100 80 TJ=125°C www.DataSheet4U.com Output Characteristics (VGE =15V) TJ=25°C Output Characteristics 100 TJ = 125°C VGE =17V VGE =13V VGE=15V 80 IC (A) 60 40 20 0 IC (A) 60 40 20 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 VGE =9V 0 1 2 V CE (V) 3 4 100 80 60 40 20 0 5 Transfert Characteristics 12 T J=25°C TJ=125°C Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C Eon 10 8 E (mJ) 6 4 IC (A) Eon Er Eoff TJ =125°C 2 0 6 7 8 9 10 11 12 0 20 40 IC (A) 60 80 100 VGE (V) Switching Energy Losses vs Gat.


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