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APTGT50H60T3G

Microsemi Corporation

Power-Module IGBT

APTGT50H60T3G Full - Bridge Trench + Field Stop IGBT® Power Module 13 14 www.DataSheet4U.com VCES = 600V IC = 50A @ Tc...


Microsemi Corporation

APTGT50H60T3G

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Description
APTGT50H60T3G Full - Bridge Trench + Field Stop IGBT® Power Module 13 14 www.DataSheet4U.com VCES = 600V IC = 50A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V June, 2006 1-5 APTGT50H60T3G – Rev 1, Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 8...




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