Document
APTGT50TDU170P
Triple Dual Common Source Trench IGBT® Power Module
C1 C3 C5
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VCES = 1700V IC = 50A @ Tc = 80°C
Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies
G1
G3
G5
E1 E1/E2
E3 E3/E4
E5 E5/E6
E2
E4
E6
G2 C2
G4 C4
G6 C6
Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Kelvin emitter for easy drive Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 1700 70 50 100 ±20 310 100A @ 1600V Unit V A V W
September, 2004 1-5 APTGT50TDU170P – Rev 0,
C1
C3
C5
G1 E1/E2 E1 E2 G2 E3/E4
G3 E3 E4 G4 E5/E6
G5 E5 E6 G6
C2
C4
C6
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
APT website – http://www.advancedpower.com
APTGT50TDU170P
All ratings @ Tj = 25°C unless otherwise specified
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Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current
Test Conditions VGE = 0V, IC = 2.5mA VGE = 0V, VCE = 1700V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0V
Min
1700
Typ
Max 5
Unit V mA V V nA
2.0 2.4 5.0
2.4 6.5 600
Dynamic Characteristics
Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y
Test Conditions VGE = 0V ;VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Diode
Min
Typ 4400 150 200 90 720 90 220 90 820 110 29 22
Max
Unit pF
ns
ns
mJ
X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM VF Qrr Maximum Reverse Leakage Current Diode Forward Voltage Reverse Recovery Charge
Test Conditions VR=1700V IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =990A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Min 1700
Typ
Max 250 500 2.2
Unit V µA V µC
September, 2004 2-5 APTGT50TDU170P – Rev 0,
1.8 1.9 19 30
APT website – http://www.advancedpower.com
APTGT50TDU170P
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 3500 -40 -40 -40 3 Min Typ Max 0.4 0.7 150 125 100 5 250 Unit °C/W V °C N.m g
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RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
Package outline
5 places (3:1)
APT website – http://www.advancedpower.com
3-5
APTGT50TDU170P – Rev 0,
September, 2004
APTGT50TDU170P
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 100 T J = 125°C
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125 100
T J=25°C
75 IC (A)
VGE =17V VGE=15V
IC (A)
75 50 25 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4
TJ=125°C
50
V GE=13V
25
VGE=9V
0 0 1 2 3 VCE (V) 4 5
125 100
Transfert Characteristics 100 80 E (mJ) 60 40 20 0 5 6 7 8 V GE (V) 9 10 11 0
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 22 Ω T J = 125°C Eon
TJ =25°C
IC (A)
75 50
T J=125°C
Eoff
25 0
25
50 IC (A)
75
100
125
Switching Energy Losses vs Gate Resistance 125 100 E (mJ) 75 50 25 0 0 20 40 60 Gate Resistance (ohms) 80
VCE = 900V VGE =15V IC = 50A TJ = 125°C Eon
Reverse Safe Operating Area 120 100 80 IC (A) 60 40 20 0 0 400 800 1200 1600 V CE (V)
V GE=15V T J=125°C RG=22 Ω
Eoff
0.45 Thermal Impedance (°C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.1 0.05 0.9 0.7 0.5 0.3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Sing.