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APTGT50TDU170P Dataheets PDF



Part Number APTGT50TDU170P
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power-Module IGBT
Datasheet APTGT50TDU170P DatasheetAPTGT50TDU170P Datasheet (PDF)

APTGT50TDU170P Triple Dual Common Source Trench IGBT® Power Module C1 C3 C5 www.DataSheet4U.com VCES = 1700V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G3 G5 E1 E1/E2 E3 E3/E4 E5 E5/E6 E2 E4 E6 G2 C2 G4 C4 G6 C6 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche .

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APTGT50TDU170P Triple Dual Common Source Trench IGBT® Power Module C1 C3 C5 www.DataSheet4U.com VCES = 1700V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G3 G5 E1 E1/E2 E3 E3/E4 E5 E5/E6 E2 E4 E6 G2 C2 G4 C4 G6 C6 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Kelvin emitter for easy drive Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 1700 70 50 100 ±20 310 100A @ 1600V Unit V A V W September, 2004 1-5 APTGT50TDU170P – Rev 0, C1 C3 C5 G1 E1/E2 E1 E2 G2 E3/E4 G3 E3 E4 G4 E5/E6 G5 E5 E6 G6 C2 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed APT website – http://www.advancedpower.com APTGT50TDU170P All ratings @ Tj = 25°C unless otherwise specified www.DataSheet4U.com Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 2.5mA VGE = 0V, VCE = 1700V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0V Min 1700 Typ Max 5 Unit V mA V V nA 2.0 2.4 5.0 2.4 6.5 600 Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGE = 0V ;VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Diode Min Typ 4400 150 200 90 720 90 220 90 820 110 29 22 Max Unit pF ns ns mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM VF Qrr Maximum Reverse Leakage Current Diode Forward Voltage Reverse Recovery Charge Test Conditions VR=1700V IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =990A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 250 500 2.2 Unit V µA V µC September, 2004 2-5 APTGT50TDU170P – Rev 0, 1.8 1.9 19 30 APT website – http://www.advancedpower.com APTGT50TDU170P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 3500 -40 -40 -40 3 Min Typ Max 0.4 0.7 150 125 100 5 250 Unit °C/W V °C N.m g www.DataSheet4U.com RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M6 Package outline 5 places (3:1) APT website – http://www.advancedpower.com 3-5 APTGT50TDU170P – Rev 0, September, 2004 APTGT50TDU170P Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 T J = 125°C www.DataSheet4U.com 125 100 T J=25°C 75 IC (A) VGE =17V VGE=15V IC (A) 75 50 25 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 TJ=125°C 50 V GE=13V 25 VGE=9V 0 0 1 2 3 VCE (V) 4 5 125 100 Transfert Characteristics 100 80 E (mJ) 60 40 20 0 5 6 7 8 V GE (V) 9 10 11 0 Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 22 Ω T J = 125°C Eon TJ =25°C IC (A) 75 50 T J=125°C Eoff 25 0 25 50 IC (A) 75 100 125 Switching Energy Losses vs Gate Resistance 125 100 E (mJ) 75 50 25 0 0 20 40 60 Gate Resistance (ohms) 80 VCE = 900V VGE =15V IC = 50A TJ = 125°C Eon Reverse Safe Operating Area 120 100 80 IC (A) 60 40 20 0 0 400 800 1200 1600 V CE (V) V GE=15V T J=125°C RG=22 Ω Eoff 0.45 Thermal Impedance (°C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.1 0.05 0.9 0.7 0.5 0.3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Sing.


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