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APTGT50TDU60PG

Microsemi Corporation

Power-Module IGBT

APTGT50TDU60PG Triple Dual Common Source Trench + Field Stop IGBT® Power Module C1 C3 C5 G1 G3 G5 www.DataSheet4U.com ...


Microsemi Corporation

APTGT50TDU60PG

File Download Download APTGT50TDU60PG Datasheet


Description
APTGT50TDU60PG Triple Dual Common Source Trench + Field Stop IGBT® Power Module C1 C3 C5 G1 G3 G5 www.DataSheet4U.com VCES = 600V IC = 50A @ Tc = 80°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies E1 E1/E2 E3 E3/E4 E5 E5 /E6 E2 E4 E6 G2 C2 G4 C4 G6 C6 Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Very low (12mm) profile Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability RoHS Compliant Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W June 2006 1-5 APTGT50TDU60PG – Rev 1, C1 C3 C5 G1 E1/E2 E1 E2 G2 E3/E4 G3 E3 E4 G4 E5/E6 G5 E5 E6 G6 C2 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Pulsed Collector Current Gate – Emitter V...




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