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APTGT50TL601G

Microsemi Corporation

Power-Module IGBT

APTGT50TL601G www.DataSheet4U.com Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A @ Tc =...


Microsemi Corporation

APTGT50TL601G

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APTGT50TL601G www.DataSheet4U.com Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A @ Tc = 80°C Application Solar converter Uninterruptible Power Supplies Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 ; 9/10 Q1 to Q4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V APTGT50TL601G– Rev0 March, 2009 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGT50TL601G www.DataSheet4U.com All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero G...




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