Document
APTGT50X60T3G
3 Phase bridge Trench + Field Stop IGBT3
Power Module
VCES = 600V IC = 50A* @ Tc = 80°C
15 31 16 19 23 29 14
25 30 20
18 22 28 R1
11 8 4
10 7 3
13
12 2
It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together.
Application Motor control
Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance Internal thermistor for temperature monitoring
Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant
APTGT50X60T3G – Rev 2 November, 2017
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings (Per IGBT)
Symbol
Parameter
VCES Collector - Emitter Voltage
IC Continuous Collector Current
ICM VGE PD
RBSOA
Pulsed Collector Current Gate – Emitter Voltage Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C TC = 80°C TC = 25°C
TC = 25°C TJ = 150°C
Max ratings
600 80* 50* 100 ±20 176
100A @ 550V
* Specification of IGBT device but output current must be limited due to size of output pin
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit V
A
V W
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APTGT50X60T3G
Electrical Characteristics (Per IGBT)
Symbol Characteristic ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V IC = 50A
Tj = 25°C Tj = 150°C
1.5 1.9 1.7
V
VGE = VCE , IC = 600µA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
600 nA
Dynamic Characteristics (Per IGBT)
Symbol Characteristic
Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance
Td(on) Tr
Td(off)
Turn-on Delay Time Rise Time Turn-off Delay Time
Tf Fall Time
Td(on) Tr
Td(off)
Turn-on Delay Time Rise Time Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V f = 1MHz
3150 200 95
pF
Inductive Switching (25°C)
VGE = ±15V VBus = 300V
IC = 50A
RG = 8.2
Inductive Switching (150°C)
VGE = ±15V VBus = 300V
IC = 50A
RG = 8.2
VGE = ±15V VBus = 300V IC = 50A
RG = 8.2
Tj = 150°C Tj = 150°C
110 45 200 40 120 50 250 60
0.43
1.75
ns
ns mJ mJ
0.85 °C/W
Reverse diode ratings and characteristics (Per diode)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Peak Repetitive Reverse Voltage
600 V
IRM Reverse Leakage Current
VR=600V
250 µA
IF DC Forward Current
Tc = 80°C
50
A
VF Diode Forward Voltage
IF = 50A VGE = 0V
Tj = 25°C Tj = 150°C
1.6 2 1.5
V
trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy
IF = 50A
VR = 300V di/dt =1800A/µs
Tj = 25°C
Tj = 150°C Tj = 25°C
Tj = 150°C Tj = 25°C Tj = 150°C
100
150 2.6 5.4 0.6 1.2
ns µC mJ
RthJC Junction to Case Thermal Resistance
1.42 °C/W
APTGT50X60T3G – Rev 2 November, 2017
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APTGT50X60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25 ∆R25/R25
B25/85 ∆B/B
Resistance @ 25°C T25 = 298.15 K
TC=100°C
50 5 3952 4
RT
R25
exp
B25
/
85
1 T25
1 T
T: Thermistor temperature RT: Thermistor value at T
Max
Unit
k % K %
Thermal and package characteristics
Symbol
VISOL TJ
TJOP TSTG TC Torque Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink M4
Package Weight
Package outline (dimensions in mm)
Min 4000 -40
-40 -40 -40 2
Max
175 TJmax - 25
125 125 3 110
Unit V
°C
N.m g
APTGT50X60T3G – Rev 2 November, 2017
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com
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APTGT50X60T3G
IC (A)
Typical Performance Curve
Output Characteristics (VGE=15V) 100
TJ=25°C
80 TJ=125°C 60 TJ=150°C
40
20
0 TJ=25°C 0 0.5 1 1.5 2 2.5 3 VCE (V)
IC (A)
Output Characteristics
100
TJ = 150°C
VGE=19V
80
VGE=13V 60
VGE=15V
40
20 VGE=9V
0 0 0.5 1 1.5 2 2.5 3 3.5 VCE (V)
IC (A)
Transfert Characteristics 100
80 TJ=25°C
60
40 TJ=125°C
20 TJ=150°C
0 567
TJ=25°C
8 9 10 11 12 VGE (V)
E (mJ)
Energy losses vs Colle.