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APTGT50X60T3G Dataheets PDF



Part Number APTGT50X60T3G
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description 3 Phase bridge Trench + Field Stop IGBT3
Datasheet APTGT50X60T3G DatasheetAPTGT50X60T3G Datasheet (PDF)

APTGT50X60T3G 3 Phase bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A* @ Tc = 80°C 15 31 16 19 23 29 14 25 30 20 18 22 28 R1 11 8 4 10 7 3 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. Application  Motor control Features  Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching fr.

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APTGT50X60T3G 3 Phase bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A* @ Tc = 80°C 15 31 16 19 23 29 14 25 30 20 18 22 28 R1 11 8 4 10 7 3 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. Application  Motor control Features  Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Kelvin emitter for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS compliant APTGT50X60T3G – Rev 2 November, 2017 All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (Per IGBT) Symbol Parameter VCES Collector - Emitter Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C Max ratings 600 80* 50* 100 ±20 176 100A @ 550V * Specification of IGBT device but output current must be limited due to size of output pin These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Unit V A V W www.microsemi.com 1-6 APTGT50X60T3G Electrical Characteristics (Per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) Gate Threshold Voltage IGES Gate – Emitter Leakage Current Test Conditions Min Typ Max Unit VGE = 0V, VCE = 600V 250 µA VGE =15V IC = 50A Tj = 25°C Tj = 150°C 1.5 1.9 1.7 V VGE = VCE , IC = 600µA 5.0 5.8 6.5 V VGE = 20V, VCE = 0V 600 nA Dynamic Characteristics (Per IGBT) Symbol Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions Min Typ Max Unit VGE = 0V VCE = 25V f = 1MHz 3150 200 95 pF Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Tj = 150°C Tj = 150°C 110 45 200 40 120 50 250 60 0.43 1.75 ns ns mJ mJ 0.85 °C/W Reverse diode ratings and characteristics (Per diode) Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Peak Repetitive Reverse Voltage 600 V IRM Reverse Leakage Current VR=600V 250 µA IF DC Forward Current Tc = 80°C 50 A VF Diode Forward Voltage IF = 50A VGE = 0V Tj = 25°C Tj = 150°C 1.6 2 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 50A VR = 300V di/dt =1800A/µs Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C 100 150 2.6 5.4 0.6 1.2 ns µC mJ RthJC Junction to Case Thermal Resistance 1.42 °C/W APTGT50X60T3G – Rev 2 November, 2017 www.microsemi.com 2-6 APTGT50X60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ R25 ∆R25/R25 B25/85 ∆B/B Resistance @ 25°C T25 = 298.15 K TC=100°C 50 5 3952 4 RT  R25 exp  B25 / 85  1 T25  1 T  T: Thermistor temperature RT: Thermistor value at T Max Unit k % K % Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Package outline (dimensions in mm) Min 4000 -40 -40 -40 -40 2 Max 175 TJmax - 25 125 125 3 110 Unit V °C N.m g APTGT50X60T3G – Rev 2 November, 2017 See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT50X60T3G IC (A) Typical Performance Curve Output Characteristics (VGE=15V) 100 TJ=25°C 80 TJ=125°C 60 TJ=150°C 40 20 0 TJ=25°C 0 0.5 1 1.5 2 2.5 3 VCE (V) IC (A) Output Characteristics 100 TJ = 150°C VGE=19V 80 VGE=13V 60 VGE=15V 40 20 VGE=9V 0 0 0.5 1 1.5 2 2.5 3 3.5 VCE (V) IC (A) Transfert Characteristics 100 80 TJ=25°C 60 40 TJ=125°C 20 TJ=150°C 0 567 TJ=25°C 8 9 10 11 12 VGE (V) E (mJ) Energy losses vs Colle.


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