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STD5N20L Dataheets PDF



Part Number STD5N20L
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET
Datasheet STD5N20L DatasheetSTD5N20L Datasheet (PDF)

www.DataSheet4U.com STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features TYPE STD5N20L s s s s Figure 1: Package ID 5A Pw 33 W VDSS 200 V RDS(on) < 0.7 Ω TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 1 DPAK 3 DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. Figur.

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www.DataSheet4U.com STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features TYPE STD5N20L s s s s Figure 1: Package ID 5A Pw 33 W VDSS 200 V RDS(on) < 0.7 Ω TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 1 DPAK 3 DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application. Figure 2: Internal Schematic Diagram APPLICATIONS s UPS AND MOTOR CONTROL s LIGHTING Table 2: Order Codes SALES TYPE STD5N20LT4 MARKING D5N20L PACKAGE DPAK PACKAGING TAPE & REEL Rev. 3 September 2004 NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532 1/10 STD5N20L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature www.DataSheet4U.com Value 200 200 ±20 5 3.6 20 33 0.27 –55 to 150 Unit V V V A A A W W/°C °C ( ) Pulse width limited by safe operating area Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 3.75 100 275 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 Min. 200 1 10 ±100 1 0.65 2.5 0.7 Typ. Max. Unit V µA µA nA V Ω VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C Gate-body Leakage Current (VDS = 0) Static Drain-source On Resistance VGS = ±20V Gate Threshold Voltage VDS = VGS, ID = 50µA VGS = 5 V, ID = 2.5 A 2/10 STD5N20L Table 6: Dynamic Symbol gfs (2) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 5 A VDS = 25V, f = 1 MHz, VGS = 0 www.DataSheet4U.com Min. Typ. 6.5 242 44 6 11.5 21.5 14 15.5 5 1.5 3 Max. Unit S pF pF pF ns ns ns ns VDD = 100 V, ID = 2.5 A RG = 4.7Ω, VGS = 5V (Resistive Load see Figure 14) VDD = 160 V, ID = 5 A, VGS = 5V 6 nC nC nC Table 7: Source Drain Diode Symbol ISD ISDM (*) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 25°C (see test circuit, see Figure 15) ISD = 5 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150°C (see test circuit, see Figure 15) 93 237 5.1 97 286 5.9 Test Conditions Min. Typ. Max. 5 20 1.5 Unit A A V ns nC A ns nC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Starting Tj =25 °C, Id = 5 A, VDD = 50 V (*) Pulse width limited by safe operating area 3/10 STD5N20L Figure 3: Safe Operating Area Figure 6: Thermal Impedance www.DataSheet4U.com Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/10 STD5N20L Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations www.DataSheet4U.com Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics 5/10 STD5N20L Figure 14: Switching Times Test Circuit For Resistive Load Figure 16: Gate Charge Test Circuit www.DataSheet4U.com Figure 15: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/10 STD5N20L www.DataSheet4U.com TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 7/10 STD5N20L www.DataSheet4U.com DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15..


NTMFS4852N STD5N20L IXTH50N20


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