AWT6166

AWT6166 GSM850/GSM900/DCS/PCS www.DataSheet4U.com Quad Band Power Amplifier Module With Integrated Power Control FEATURES Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm High Efficiency (PAE) at Pmax: -GSM850, 54% -GSM900, 56% -DCS, 53% -PCS, 51% +35 dBm GSM850/900 Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55 dB dynamic range GPRS Class 12 Capable ADVANCED PRODUCT INFORMATION - Rev 0.3 APPLICATIONS Dual/Tri/Quad Band Handsets & PDAs 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module PRODUCT DESCRIPTION As with previous generations, the AWT6166 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6166 input and output terminals are internal matched to 50 ohms and DC blocked, reducing the VCC2 number of external components required in the final application. Both PA die, GSM850/900 and DCS/ PCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. DCS/PCSIN BS TX EN MATCH MATCH DCS/PCSOUT CMOS BIAS/Integrated Power Control VBATT CEXT VRAMP VCC_OUT H(s) GSM850/900IN MATCH MATCH GSM850/900OUT VCC2 Figure 1: Block Diagram 01/2005 AWT6166 VCC2 GND www.DataSheet4U.com 16 15 14 13 12 11 DCS/PCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN 1 2 3 4 5 6 7 18 17 DCS/PCS_OUT GND GND VCC_OUT GND GND GSM_OUT 8 9 10 Figure 2: Pinout (X- ray Top View) Table 1: Pin De...