GSM850/GSM900/DCS/PCS Quad Band Power Amplifier
AWT6166R
GSM850/GSM900/DCS/PCS www.DataSheet4U.com Quad Band Power Amplifier Module With Integrated Power Control
FEATUR...
Description
AWT6166R
GSM850/GSM900/DCS/PCS www.DataSheet4U.com Quad Band Power Amplifier Module With Integrated Power Control
FEATURES
Integrated Vreg (regulated supply) Harmonic Performance ≤ -20 dBm High Efficiency (PAE) at Pmax: -GSM850, 53% -GSM900, 55% -DCS, 53% -PCS, 53% +35 dBm GSM850/900 Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55 dB Dynamic Range GPRS Class 12 Capable RoHS Compliant Package, 250°C MSL-3 Data Sheet - Rev 2.0
APPLICATIONS
Dual/Tri/Quad Band Handsets & PDAs
M15 Package 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module
PRODUCT DESCRIPTION
As with previous generations, the AWT6166R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6166R input and output terminals are internal matched to 50 ohms and DC blocked,
VCC2
reducing the number of external components required in the final application. Both PA die, GSM850/900 and DCS/PCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability.
DCS/PCSIN BS TX
EN
MATCH
MATCH
DCS/PCSOUT
CMOS BIAS/Integrated Power Control
VBATT CEXT VRAMP
VCC_OUT
H(s)
GSM850/900IN
MATCH
MATCH
GSM850/900OUT
VCC2
Figure 1: Block Diagram
02/2006
AWT6166R
VCC2
GND
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16 15 14 13 12 11
DCS/PCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN
1 2 3 4 5 6 7
18
17
DCS/PCS_OUT GND GND VCC_OUT GND GND GSM_OUT
8
9
10
Figure 2: Pinout...
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