ELECTRICAL CHARACTERISTICS
DIM800XSM33-F000
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Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min Typ. Max Units
ICES Collector cut-off current
VGE = 0V,VCE = VCES
VGE = 0V, V = V ,Tcase =125 °C
IGES Gate leakage current
VGE = ±15V, VCE = 0V
VGE(TH) Gate threshold voltage
IC = 80mA, VGE = VCE
VCE(sat)† Collector-emitter saturation
voltage
VGE = 15V, IC = 800A
VGE =15V, IC = 800A,TJ = 125 °C
IF Diode forward current
DC
IFM Diode maximum forward current tp = 1ms
VF† Diode forward voltage
IF = 800A
IF = 800A, TJ = 125 °C
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
4
60
1
5.5 6.5 7.0
2.8
3.6
800
1600
2.9
3.0
144
mA
mA
A
V
V
V
A
A
V
V
nF
Cres Reverse transfer capacitance
LM Module inductance
RINT Internal resistance
SCData Short circuit current, ISC
VCE = 25V, VGE = 0V, f = 1MHz
Tj = 125°C, VCC = 2500V
VGE
tp
VCE(max) = VCES – L* x di/dt
IEC 6074-9
I1
I2
2.2
20
135
4000
3700
nF
nH
µ
A
A
Note:
†Measured at the auxiliary terminals
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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