IRF6655PBF

PD - 97226A DirectFET™ Power MOSFET ‚ RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V-75V in Synchronous Buck applications l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6655PbF IRF6655TRPbF www.DataSheet4U.com Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 2.8nC RDS(on) Qoss 4.5nC 100V max ±20V max 53mΩ@ 10V Qgs2 0.58nC Qrr 37nC Vgs(th) 4.0V 8.7nC SH MN DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT Description The IRF6655PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6655PbF is opti...