Silicon N-Channel Power MOSFET
HAT2200R
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • Hig...
Description
HAT2200R
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 22 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8 DD D D
1 234
4 G
SSS 12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0232-0201Z Rev.2.01
Nov.29.2016
Rev.2.01, Nov.29.2016, page 1 of 7
HAT2200R
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
100
Gate to source voltage
VGSS
±20
Drain current Drain peak current
ID
8
ID(pulse)Note1
64
Body-drain diode reverse drain current
IDR
8
Avalanche current
IAP Note 2
8
Avalanche energy
EAR Note 2
6.4
Channel dissipation
Pch Note3
2.5
Channel to Ambient Thermal Impedance
θch-a Note3
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Unit
V V A A A A mJ W °C/W °C °C
(Ta = 25°C)
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance
V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss
100 — — 3.5 — — 8 —
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to sour...
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