HAT2200WP

HAT2200WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 321 G Preliminary Datasheet REJ03G1678-0311 Rev.3.11 Nov.25.2016 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25°C, Rg  50  3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 100 ±20 20 80 20 20 40 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1678-0311 Rev.3.11 Nov. 25, 2016 Page 1 of 7 HAT2200WP Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 100 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 3.5 Static drain to source on state RDS(on) — resistance RDS(on) — Forward transfer admittance |yfs| 19 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate resistance Rg — Total gate charge ...