HAT2201R

HAT2201R Silicon N Channel Power MOS FET Power Switching Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0233-0301Z Rev.3.01 Nov.30.2016 Rev.3.01, Nov.30.2016, page 1 of 7 HAT2201R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 6 ID(pulse)Note1 48 Body-drain diode reverse drain current IDR 6 Avalanche current IAP Note 2 6 Avalanche energy EAR Note 2 3.6 Channel dissipation Pch Note3 2.5 Channel to Ambient Thermal Impedance θch-a Note3 50 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Unit V V A A A A mJ W °C/W °C °C (Ta = 25°C) Electrical Characteristics Item Symbol Min Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss 100 — — 3.5 — — 6 — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charge Qg — Gate to sour...