HAT2205C

www.DataSheet4U.com HAT2205C Silicon N Channel MOS FET Power Switching REJ03G1237-0400 Rev.4.00 Jan 26, 2006 Features Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) Low drive current. High density mounting 1.8 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Ratings 12 ±8 3 12 3 850 150 –55 to +150 Unit V V A A A mW °C °C Rev.4.00 Jan 26, 2006 page 1 of 6 HAT2205C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Min 12 ±8 — — 0.3 — — — 6 — — — — — — — — — — — Typ — — — — — 38 48 65 9 430 72 35 6 0.9 0.9 9 3 30 3 0.8 Max — — ±10 1 1.2 50 67 97 — — — — — — — — — — — 1.1 Unit V V µA µA V mΩ mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V www.DataSheet4U.com (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±10 µA, VDS...