HAT2210R

Data Sheet HAT2210R Silicon N Channel Power MOSFET with Schottky Barrier Diode High Speed Power Switching R07DS1368EJ0301 Rev.3.01 Jan 20, 2017 Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Built-in Schottky Barrier Diode Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 78 DD 56 DD 1234 2 4 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S 1 MOS1 S 3 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 MOS1 30 ±20 7.5 60 7.5 1.5 MOS2 & SBD 30 ±12 8.0 64 8.0 1.5 Channel temperature Tch 150 150 Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1. PW  10 s, duty cycle  1% 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10 s (Ta = 25°C) Unit V V A A A W °C °C R07DS1368EJ0301 Rev.3.01 Jan 20, 2017 Page 1 of 10 HAT2210R Electrical Characteristics MOS1 Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forw...