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HAT2217C
Silicon N-Channel Power MOSFET
Description
www.DataSheet4U.com HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005 Features Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) Low drive current. High density mounting 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 DDD D Index band 4 5 6 2 3 6 G...
Renesas Technology
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