HAT2226R Datasheet PDF - Renesas Technology

HAT2226R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High d...

HAT2226R Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1466-0100 Rev.1.00 Jul 18, 2006 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage VDSS 600 VGSS ±30 Drain current Drain peak current ID 0.1 ID Note1 (pulse) 0.4 Body-drain diode reverse drain current IDR 0.1 Body-drain diode reverse drain peak current IDR Note1 (pulse) 0.4 Channel dissipation Pch Note2 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A A W °C °C Rev.1.00 Jul 18, 2006 page 1 of 3 HAT2226R Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 3.0 — Ciss — Coss — Cr...