Silicon N-Channel Power MOSFET
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HAT2265H
Silicon N Channel Power MOS FET Power Switching
Rev.0.00 Sept.2004
Features
• High speed ...
Description
www.DataSheet4U.com
HAT2265H
Silicon N Channel Power MOS FET Power Switching
Rev.0.00 Sept.2004
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Lead Free
Outline
LFPAK
5
5 D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5 Drain
S S S 1 2 3
Rev.0.00, Sept.2004, page 1 of 5
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HAT2265H
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP
Note 2 Note 2 Note3 Note1
Ratings 30 ±20 55 220 55 30 90 30 4.17 150 –55 to +150
Unit V V A A A A mJ W °C/W °C °C
EAR Pch
θch-C Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C
Rev.0.00, Sept.2004, page 2 of 5
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HAT2265H
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay...
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