AT52BC1661AT

Features 16-Mbit (x16) Flash and 8-Mbit PSRAM 2.7V to 3.3V Operating Voltage Low Operating Power – 27 mA Operating Current – 53 µA Standby Current Extended Temperature Range www.DataSheet4U.com Flash 2.7V to 3.3V Read/Write Access Time – 70 ns Sector Erase Architecture – Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time – 12 µs Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 12 mA Active – 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support Top/Bottom Boot Block Configuration 128-bit Protection Register Minimum 100,000 Erase Cycles 16-Mbit Flash + 8-Mbit PSRAM Stack Memory AT52BC1661A AT52BC1661AT Preliminary PSRAM 8-Mbit (512K x 16) 2.7V to 3.3V VCC Operating Voltage 70 ns Access Time Fully Static Operation and Tri-state Output ISB0 < 10 µA when Deep Power-Down Device Number AT52BC1661A(T) Flash Configuration 16M (1M x 16) PSRAM Configuration 8M (512K x 16) Rev. 3455A–STKD–11/04 1 www.DataSheet4U.com CBGA Top View 1 2 3 4 5 6 7 8 9 10 11 12 A NC NC NC A11 A15 A14 A13 A12 GND NC N...