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JDP2S01E Dataheets PDF



Part Number JDP2S01E
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description UHF~VHF Band RF Attenuator Applications
Datasheet JDP2S01E DatasheetJDP2S01E Datasheet (PDF)

JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type www.DataSheet4U.com JDP2S01E UHF~VHF Band RF Attenuator Applications • • • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 0.65 Ω (typ.) Low capacitance: CT = 0.65 pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 125 −55~1.

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JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type www.DataSheet4U.com JDP2S01E UHF~VHF Band RF Attenuator Applications • • • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 0.65 Ω (typ.) Low capacitance: CT = 0.65 pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 125 −55~125 Unit V mA °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1G1A Weight: 0.0014 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs IR = 10 μA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Test Condition Min 30 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ 0.9 0.65 0.65 Max ⎯ 0.1 0.95 0.8 1.0 Unit V μA V pF Ω Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking 1 2007-11-01 JDP2S01E www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reli.


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