JDP2S02AS

JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type www.DataSheet4U.com JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 1.0 Ω (typ.) Low capacitance: CT = 0.3 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 150 −55~150 Unit V mA °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA Weight: 0.0011 g ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 μA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Min 30 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ 0.9 0.3 1.0 Max ⎯ 0.1 0.94 0.5 1.5 Unit V μA V pF Ω Note: S...