UHF~VHF Band RF Attenuator Applications
JDP2S02S
TOSHIBA Diode Silicon Epitaxial PIN Type
www.DataSheet4U.com
JDP2S02S
UHF~VHF Band RF Attenuator Applications
...
Description
JDP2S02S
TOSHIBA Diode Silicon Epitaxial PIN Type
www.DataSheet4U.com
JDP2S02S
UHF~VHF Band RF Attenuator Applications
Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 1.0 Ω (typ.) Low capacitance: CT = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 150 −55~150 Unit V mA °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC JEITA TOSHIBA Weight: 0.0011 g
― ― 1-1K1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 μA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Min 30 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ 0.9 0.3 1.0 Max ⎯ 0.1 0.94 0.5 1.5 Unit V μA V pF Ω
Note: Sig...
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