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MBR20H200CT Dataheets PDF



Part Number MBR20H200CT
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual Common-Cathode High-Voltage Schottky Rectifier
Datasheet MBR20H200CT DatasheetMBR20H200CT Datasheet (PDF)

MBR20H200CT, MBRF20H200CT & SB20H200CT-1 www.DataSheet4U.com Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB ITO-220AB FEATURES • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation 1 2 3 1 2 3 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, freewhee.

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MBR20H200CT, MBRF20H200CT & SB20H200CT-1 www.DataSheet4U.com Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB ITO-220AB FEATURES • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation 1 2 3 1 2 3 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications. MBR20H200CT TO-262AA MBRF20H200CT 1 2 3 SB20H200CT-1 PIN 1 PIN 3 PIN 2 CASE MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 in-lbs maximum Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ 2 x 10 A 200 V 290 A 0.75 V 175 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current total device per diode SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM ERSM EAS VC dV/dt TJ, TSTG VAC MBR20H200CT 200 200 200 20 10 290 1.0 20 20 25 10 000 - 65 to + 175 1500 UNIT V V V A A A mJ mJ kV V/µs °C V www.vishay.com 1 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH Electrostatic discharge capacitor voltage human body model air discharge: C = 100 pF, R 0 1.5 kΩ Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute Document Number: 88786 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) TEST IF = 10 A IF = 10 A IF = 20 A IF = 20 A TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 125 °C 4.0 V, 1 MHz SYMBOL TYP. 0.81 0.65 0.87 0.74 5.0 1.0 250 MAX. 0.88 0.75 0.97 0.85 UNIT VF V Maximum reverse current per diode at working peak reverse voltage (1) Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle IR CJ µA mA pF THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC MBR 2.0 MBRF 4.0 SB 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-262AA PREFERRED P/N MBR20H200CT-E3/45 MBRF20H200CT-E3/45 SB20H200CT-1E3/45 UNIT WEIGHT (g) 2.06 2.20 1.58 PACKAGE CODE 45 45 45 BASE QUANTITY 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 MBR, MBRB 350 325 300 275 250 225 200 175 150 125 100 75 50 25 0 1 10 100 Average Forward Current (A) 20 MBRF 15 10 5 0 25 50 75 100 125 150 175 Case Temperature (°C) Average Forward Current (A) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve (Total) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88786 Revision: 18-Apr-08 MBR20H200CT, MBRF20H200CT & SB20H200CT-1 www.DataSheet4U.com Vishay General Semiconductor 100 10 000 Instantaneous Forward Current (A) 10 TJ = 125 °C TJ = 75 °C 1 TJ = 25 °C Junction Capacitance (pF) 1.1 TJ = 175 °C 1000 100 0.1 0.1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 10 000 TJ = 175 °C 100 1000 100 TJ = 125 °C TJ = 75 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 MBRF 10 1 TJ = 25 °C 1 MBR, MBRB 0.1 0.01 10 20 30 40 50 60 70 80 90 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88786 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMEN.


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