MBR20H200CT, MBRF20H200CT & SB20H200CT-1
www.DataSheet4U.com Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
TO-220AB ITO-220AB
FEATURES • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation
1
2
3 1
2
3
• Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications.
MBR20H200CT TO-262AA
MBRF20H200CT
1
2
3
SB20H200CT-1
PIN 1 PIN 3 PIN 2 CASE
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 in-lbs maximum Polarity: As marked
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ 2 x 10 A 200 V 290 A 0.75 V 175 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current total device per diode SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM ERSM EAS VC dV/dt TJ, TSTG VAC MBR20H200CT 200 200 200 20 10 290 1.0 20 20 25 10 000 - 65 to + 175 1500 UNIT V V V A A A mJ mJ kV V/µs °C V www.vishay.com 1
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH Electrostatic discharge capacitor voltage human body model air discharge: C = 100 pF, R 0 1.5 kΩ Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute Document Number: 88786 Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage per diode (1) TEST IF = 10 A IF = 10 A IF = 20 A IF = 20 A TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 125 °C 4.0 V, 1 MHz SYMBOL TYP. 0.81 0.65 0.87 0.74 5.0 1.0 250 MAX. 0.88 0.75 0.97 0.85 UNIT
VF
V
Maximum reverse current per diode at working peak reverse voltage (1) Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
IR CJ
µA mA pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance per diode SYMBOL RθJC MBR 2.0 MBRF 4.0 SB 2.0 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-262AA PREFERRED P/N MBR20H200CT-E3/45 MBRF20H200CT-E3/45 SB20H200CT-1E3/45 UNIT WEIGHT (g) 2.06 2.20 1.58 PACKAGE CODE 45 45 45 BASE QUANTITY 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25 MBR, MBRB 350 325 300 275 250 225 200 175 150 125 100 75 50 25 0 1 10 100
Average Forward Current (A)
20 MBRF 15
10
5
0 25 50 75 100 125 150 175
Case Temperature (°C)
Average Forward Current (A)
Number of Cycles at 60 Hz
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 88786 Revision: 18-Apr-08
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
www.DataSheet4U.com Vishay General Semiconductor
100
10 000
Instantaneous Forward Current (A)
10 TJ = 125 °C TJ = 75 °C 1 TJ = 25 °C
Junction Capacitance (pF)
1.1
TJ = 175 °C
1000
100
0.1 0.1
10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000 TJ = 175 °C
100
1000
100
TJ = 125 °C TJ = 75 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10 MBRF
10
1 TJ = 25 °C
1
MBR, MBRB
0.1
0.01 10 20 30 40 50 60 70 80 90 100
0.1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88786 Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
www.vishay.com 3
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
PACKAGE OUTLINE DIMEN.