HiPerRFTM Power MOSFETs
Advance Technical Information
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HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhanc...
Description
Advance Technical Information
www.DataSheet4U.com
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 60N20F IXFT 60N20F
VDSS ID25 RDS(on)
= = =
200V 60A 38mΩ
trr ≤ 200 ns
TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings
(TAB)
200 200 ± 20 ± 30 60 240 60 35 1.5 10 315 -55 ... +150 150 -55 ... +150 300
V V V V A A A mJ J V/ns W °C °C °C °C
G = Gate, S = Source,
TO-268 (IXFT) Case Style
G S D = Drain, TAB = Drain
(TAB)
Features
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1.13/10 Nm/lb.in. 6 4 g g
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RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 nA TJ = 125°C 50 µA 1.5 mA 38 m Ω
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
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