64-Mbit Flash Memory and 8-Mbit SRAM
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M36W0R6030T0 M36W0R6030B0
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x1...
Description
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M36W0R6030T0 M36W0R6030B0
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
FEATURES SUMMARY
MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration): 8810h – Device Code (Bottom Flash Configuration): 8811h ■ PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY ■ PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options ■ MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) ■ SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 66MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70ns ■ DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations
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Figure 1. Package
FBGA
Stacked TFBGA88 (ZAQ)
BLOCK LOCKING – All blocks locked at Power-up – Any combination of blocks can be locked – WPF for Block Lock-Down ■ SECURITY – 128-bit user programmable OTP cells – 64-bit unique device number ■ COMMON FLASH INTERFACE (CFI) ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK SRAM ■ 8 Mbit (512Kb x 16 bit) ■ ACCESS TIME: 70ns ■ LOW VDDS DATA RETENTION: 1.0V ■ POWER DOWN FEATURES USING TWO CHIP ENABLE INP...
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