M36W0R6040B0

www.DataSheet4U.com M36W0R6040T0 M36W0R6040B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration), M36W0R6040T0: 8810h – Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h PACKAGES – Compliant with Lead-Free Soldering Processes – Lead-Free Versions Figure 1. Package FBGA Stacked TFBGA88 (ZA) 8 x 10mm FLASH MEMORY ■ PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options ■ MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top location) ■ SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 66MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70ns ■ DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations ■ ■ ■ ■ BLOCK LOCKING – All blocks locked at Power-up – Any combination of blocks can be locked – WPF for Block Lock-Down SECURITY – 128-bit user programmable OTP cells – 64-bit unique device number COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK PSRAM ■ ACCESS TIME: 70ns ■ LOW STANDBY CURRENT: 110µA ■ DEEP POWER DOWN...