IXEN60N120

IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V C G G C miniBLOC, SOT-227 B E153432 G E E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 100 65 100 VCES 10 445 V V A A A µs W Features NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current miniBLOC package - isolated copper base plate - screw terminals - kelvin emitter terminal for easy drive - industry standard outline Applications single switches choppers with complementary free wheeling diode phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.1 2.5 4.5 0.8 200 80 50 680 30 7.2 4.8 3.8 350 2.7 6.5 0.8 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.28 K/W VCE(sat) VGE(th) ICES IGE...