IXER35N120D1

Advanced Technical Information www.DataSheet4U.com NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ. C G = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside* C = Collector E = Emitter *Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 32 50 VCES 10 200 V V A A A µs W Features NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS 247TM package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline Applications single switches choppers with complementary free wheeling diodes phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 0.4 200 150 60 700 50 4.2 3.5 2 250 1.2 2.8 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon Rt...