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APT30DQ120BG Dataheets PDF



Part Number APT30DQ120BG
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Datasheet APT30DQ120BG DatasheetAPT30DQ120BG Datasheet (PDF)

1200V 30A APT30DQ120B APT30DQ120S www.DataSheet4U.com APT30DQ120BG* APT30DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (B) TO - 24 PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching 1 2 7 D3PAK • .

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1200V 30A APT30DQ120B APT30DQ120S www.DataSheet4U.com APT30DQ120BG* APT30DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (B) TO - 24 PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • PFC PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics PRODUCT BENEFITS • Low Losses • Low Noise Switching 1 2 7 D3PAK • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated • Increased System Power Density 1 2 (S) 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT30DQ120B_S(G) UNIT 1200 Volts Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 30 43 210 20 -55 to 175 300 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 1200V VR = 1200V, TJ = 125°C MIN TYP MAX UNIT 2.8 3.4 2.1 3.3 Volts 100 500 36 pF Microsemi Website - http://www.microsemi.com 053-4244 Rev B 7-2009 µA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/µs VR = 800V, TC = 125°C IF = 30A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 30A, diF/dt = -200A/µs VR = 800V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT30DQ120B_S(G) TYP MAX UNIT www.DataSheet4U.com 26 ns - 320 545 4 435 2100 9 180 2975 28 nC Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance MIN TYP MAX UNIT °C/W oz g .80 0.22 Package Weight 5.9 10 lb•in N•m Torque Maximum Mounting Torque 1.1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.90 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.80 D = 0.9 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10 -5 0.7 0.5 Note: PDM t1 t2 0.3 SINGLE PULSE 0.1 0.05 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RE.


APT30DQ120B APT30DQ120BG APT30DQ120S


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