Diode
JDP2S01AFS
TOSHIBA Diode Silicon Epitaxial PIN Type
www.DataSheet4U.com
JDP2S01AFS
UHF~VHF Band RF Switch Applications
...
Description
JDP2S01AFS
TOSHIBA Diode Silicon Epitaxial PIN Type
www.DataSheet4U.com
JDP2S01AFS
UHF~VHF Band RF Switch Applications
Unit: mm · · · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 0.65Ω(typ.) Low capacitance: CT = 0.65 pF (typ.)
カソードマーク
0.8 ±0.05 1 .0 ±0.05
0.6 ±0.05
0.1
A
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 150 −55~150 Unit V mA °C °C
0.07
M
0.1
A
0.2 ±0.05
0.1±0.05
0.48+0.02 -0.03
JEDEC JEITA TOSHIBA Weight: 0.0006 g
― ― 1-1L1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 µA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Min 30 ¾ ¾ ¾ ¾ Typ. ¾ ¾ 0.86 0.65 0.65 Max ¾ 0.1 0.92 0.8 1 Unit V µA V pF Ω
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
1
1
2003-2-21
JDP2S01AFS
www.DataSheet4U.com
CT – VR
5 3 f = 1 MHz Ta = 25°C Vsig = 20 mVrms 100 500
rs – IF
Ta = 25°C Tester: HP4291A
f = 0.1 GHz
(pF)
(9)
0.5 1.0
Capacitance CT
Series resistance rs
1
0.5 0.3
1.5 10
1.5 1.0 0.5
0.1 0.1
0.3
1
3
10
1 0.5 0.01 f = 0.1 GHz 0.1 1 10
Reverse voltage VR
(V)
Forward current
IF
(mA)
2
2003-2-21
JDP2S01AFS
www.DataSheet4U.com
RESTRICTIONS ON PRODUCT USE
000707EAA
·...
Similar Datasheet