JDV2S22FS

JDV2S22FS TOSHIBA Diode Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S22FS VCO for the UHF band High capacitance ratio: C1V/C4V = 1.82 (typ.) Low series resistance: rs = 0.50 Ω (typ.) This device is suitable for use in a small-size tuner. ｶｿｰﾄﾞﾏｰｸ Unit: mm 0.6±0.05 0.1 0.8±0.05 A Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C 0.07 M 0.1 A 0.2 ±0.05 0.1±0.05 0.48 +0.02 -0.03 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Test Condition Min 10 ⎯ 3.24 1.77 1.72 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 Max ⎯ 3 ...