VCO Diode
JDV2S22FS
TOSHIBA Diode Silicon Epitaxial Planar Type
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JDV2S22FS
VCO for the UHF band
• • • High cap...
Description
JDV2S22FS
TOSHIBA Diode Silicon Epitaxial Planar Type
www.DataSheet4U.com
JDV2S22FS
VCO for the UHF band
High capacitance ratio: C1V/C4V = 1.82 (typ.) Low series resistance: rs = 0.50 Ω (typ.) This device is suitable for use in a small-size tuner.
カソードマーク
Unit: mm
0.6±0.05 0.1 0.8±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
0.07
M
0.1
A
0.2 ±0.05
0.1±0.05
0.48 +0.02 -0.03
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC JEITA TOSHIBA
― ― 1-1L1A
Weight: 0.0006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Test Condition Min 10 ⎯ 3.24 1.77 1.72 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 Max ⎯ 3 ...
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