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N08L1618C2A Dataheets PDF



Part Number N08L1618C2A
Manufacturers NanoAmp Solutions
Logo NanoAmp Solutions
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N08L1618C2A DatasheetN08L1618C2A Datasheet (PDF)

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L1618C2A Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performanc.

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L1618C2A Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L1618C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs Features • Single Wide Power Supply Range 1.65 to 2.2 Volts • Very low standby current 0.5µA at 1.8V (Typical) • Very low operating current 1.0mA at 1.8V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.2V • Very fast output enable access time 25ns OE access time • Very fast Page Mode access time tAAP = 25ns • Automatic power down to standby mode • TTL compatible three-state output driver Product Family Part Number N08L1618C2AB N08L1618C2AB2 Package Type 48 - BGA 48 - BGA Green Operating Temperature Power Supply (Vcc) Speed Standby Operating Current (ISB), Current (Icc), Typical Typical 0.5 µA 1 mA @ 1MHz 70ns @ 1.8V -40oC to +85oC 1.65V - 2.2V 85ns @ 1.65V Pin Configuration 1 A B C D E F G H LB I/O8 I/O9 VSS VCC Pin Descriptions 3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 I/O12 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected I/O14 I/O13 I/O15 A18 NC A8 48 Pin BGA (top) 8 x 10 mm (DOC# 14-02-019 REV F ECN# 01-1280) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. N08L1618C2A NanoAmp Solutions, Inc. Functional Block Diagram Address Inputs A0 - A3 Word Address Decode Logic Advance Information www.DataSheet4U.com Address Inputs A4 - A18 Page Address Decode Logic 32K Page x 16 word x 16 bit RAM Array Input/ Output Mux and Buffers Word Mux I/O0 - I/O7 I/O8 - I/O15 CE1 CE2 WE OE UB LB Control Logic.


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