512K x 36 - 1024K x 18 18Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM
IS61VPD51236A IS61VPD102418A IS61LPD51236A IS61LPD102418A 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE...
Description
IS61VPD51236A IS61VPD102418A IS61LPD51236A IS61LPD102418A 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
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ISSI
®
FEBRUARY 2006
FEATURES
Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data and control Burst sequence control using MODE input Three chip enable option for simple depth expansion and address pipelining Common data inputs and data outputs Auto Power-down during deselect Double cycle deselect Snooze MODE for reduced-power standby JTAG Boundary Scan for PBGA package Power Supply LPD: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5% VPD: VDD 2.5V + 5%, VDDQ 2.5V + 5% JEDEC 100-Pin TQFP and 165-pin PBGA package Lead-free available
DESCRIPTION The ISSI IS61LPD/VPD51236A and IS61LPD/
VPD102418A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD102418A is organized as 1,048,576 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positiveedge-triggered single clock input. Write cycles are internally self-timed and are initiated by the rising ed...
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