APT200GN60B2G

www.DataSheet4U.com APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. 1200V Field Stop Trench Gate: Low VCE(ON) Easy Paralleling Integrated Gate Resistor :Low EMI, High Reliability RoHS Compliant Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current Total Power Dissipation Operating and Storage Junction Temperature Range 1 All Ratings: TC = 25°C unless otherwise specified. Ratings 600 ±20 283 158 600 600A @ 600V 682 -55 to 175 300 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 175°C Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC ...